| PART |
Description |
Maker |
| AT29LV256 AT29LV256-15JC AT29LV256-15JI AT29LV256- |
256K 32K x 8 3-volt Only CMOS Flash Memory
|
ATMEL[ATMEL Corporation]
|
| AT29C256-9 AT29C256 AT29C256-70PC AT29C256-70JC AT |
256K 32K x 8 5-volt Only CMOS Flash Memory
256K (32K x 8) 5-volt Only Flash Memory
|
ATMEL[ATMEL Corporation]
|
| 27C256 27C256-10 27C256-10EL 27C256-10EP 27C256-10 |
256K (32K x 8) CMOS EPROM
256K (32K x 8) CMOS EPROM 256K2K的8）的CMOS存储
DIODE SCHOTTKY 150V 60A TO247AC
CAPACITOR 1500UF 80V ELECT TSHA
CAP 270UF 400V ELECT TS-ED
From old datasheet system
256K (32x8) CMOS EPROM
|
YEONHO Electronics Co., Ltd.
Microchip Technology, Inc.
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
|
| AM29LV002 AM29LV002B-90RECB AM29LV002B-120FCB AM29 |
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only/ Boot Sector Flash Memory
Half Bridge Driver, LO Out of Phase with RT, Programmable Oscillating Frequency, 1.2us Deadtime in a 8-pin DIP package
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位56亩8位）.0伏的CMOS只，引导扇区闪存
Connector 连接
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 100 ns, PDSO40
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 3V PROM, 120 ns, PDSO40
MB 18C 18#20 PIN RECP 256K X 8 FLASH 3V PROM, 120 ns, PDSO40
2 Megabit (256 K x 8-Bit) CMOS 3.0 Volt-only, Boot Sector Flash Memory 2兆位256亩8位）.0伏的CMOS只，引导扇区闪存
256K X 8 FLASH 3V PROM, 90 ns, PDSO40
|
AMD
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| BR93L66RFVM-WTR CAT28C64BGI-12T CAT25C32Y14I CAT25 |
EEPROM SRL 256X16 BIT
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
EEPROM (4kx8) 32K 2.5-6.0
EEPROM (4kx8) 32K 1.8-6.0
EEPROM (1024x8) 8K
EEPROM 256K X 8 200ns
EEPROM I2C BUS; 4.5 to 5.5V 16Kbit; -40 to 85 C
EEPROM (256x8) 2K 1.8-6.0
EEPROM (512x8) 4k 1.8-6.0
EEPROM 128K X 8 150ns
EEPROM (8kx8) 64K 1.8-6.0
EEPROM (2048x8)(1024x16)16K
EEPROM U 804-29EE0107CWH
EEPROM 64K X 8 70ns
EEPROM (256x8) 2K 2.5-6.0
EEPROM (8kx8) 64K 2.5-6.0
SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, SOIC
SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, TSSOP
EEPROM (384x8) 128k 16
EEPROM SPI 1KBIT
EEPROM SPI 4096X8 BIT
EEPROM SRL 64X16 BIT
EEPROM (256x8) (128x16) 2K
8-Kb I<sup>2</sup>C CMOS Serial EEPROM, SOIC
EEPROM (128x8) 1k 2.5-6.0
EEPROM (8kx8) 64K 5V 90ns
EEPROM (32kx8) 256K 5V 150
EEPROM (32kx8) 256K 5V 120
EEPROM 2kb 1.7-5.5V Ind I2C
EEPROM 512K-Bit CMOS PARA EEPROM
EEPROM (32kx8) 256K 3V 250
EEPROM 64K X 8 512K 5V 150
EEPROM 256K (32KX8)
|
Omron Electronics, LLC
Atmel, Corp.
MITSUMI ELECTRIC CO., LTD.
Intersil, Corp.
Cypress Semiconductor, Corp.
TE Connectivity, Ltd.
Silicon Storage Technology, Inc.
BCD Semiconductor Manufacturing, Ltd.
Belden, Inc.
Rohm Co., Ltd.
Bourns, Inc.
NXP Semiconductors N.V.
Lattice Semiconductor, Corp.
Rectron Semiconductor
SIEMENS AG
Maxim Integrated Products, Inc.
Rochester Electronics, LLC
RF Solutions, Ltd.
Fujitsu, Ltd.
|
| AM28F020A AM28F020A-120FCB AM28F020A-150FCB AM28F0 |
RES 562-OHM 1% 0.125W 100PPM THK-FILM SMD-0805 TR-7-PA
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位56亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 2兆位256亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 70 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 150 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PQCC32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDIP32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 200 ns, PDSO32
2 Megabit (256 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 256K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| IDT71V256SB20Y IDT71V256 IDT71V256SB IDT71V256SB12 |
3.3V CMOS FAST SRAM WITH 2.5V COMPATIBLE INPUTS 256K (32K x 8-BIT) 32K X 8 CACHE TAG SRAM, 12 ns, PDSO28
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| UPD43256B00 UPD43256B-XXL UPD43256B-XXLL UPD43256B |
32K X 8 STANDARD SRAM, 70 ns, PDSO28
32K X 8 STANDARD SRAM, 100 ns, PDSO28
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
256K-BIT CMOS STATIC RAM 32K-WORD BY 8-BIT
|
NEC
|
| CAT5111PI-00 CAT5111P-00 CAT5111U-00TE13 CAT5111P- |
FLEx18™ 3.3V 32K/64K/128K/256K/512K x 18 Synchronous Dual-Port RAM
3.3V 16K/32K x 36 FLEx36™ Asynchronous Dual-Port Static
DIGITAL POTENTIOMETER|CMOS|DIP|8PIN|PLASTIC
FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM 数字电位器|的CMOS |专科| 8引脚|塑料
DIGITAL POTENTIOMETER|CMOS|TSSOP|8PIN|PLASTIC 数字电位器|的CMOS | TSSOP封装| 8引脚|塑料
DIGITAL POTENTIOMETER|CMOS|SOP|8PIN|PLASTIC 数字电位器|的CMOS |专科| 8引脚|塑料
|
Analog Devices, Inc.
|
| 27C256-10L 27C256-12L |
256K (32K x 8) CMOS EPROM
|
Microchip
|
| 27C256 |
256K CMOS UV Erasable PROM (32K X 8)
|
General Semiconductor Inc
|
| AT29C256-70PI |
256K (32K x 8) 5-volt Only Flash Memory(278.93 k) 256K2K的8伏只有闪存（278.93十一
|
Everlight Electronic Co., Ltd.
|
|
